Pekka Laukkanen
peklau@utu.fi ORCID identifier: https://orcid.org/0000-0003-4220-985X |
surface science; semiconductor devices, surface passivation,
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Atomic-Level Insights Into the Initial Oxidative Crystallization of Si(100) to Periodic SiOx (2026)
- Advanced theory and simulations
(A1 Refereed original research article in a scientific journal) - Challenges in Simultaneous Microstructuring and Hyperdoping of Germanium with Ultrafast Laser (2026)
- physica status solidi (a)
(A1 Refereed original research article in a scientific journal) - Effect of H2O2 and H2O immersions on epitaxial GaInP-GaAs interfaces: Photoluminescence and x-ray photoelectron study (2026)
- Applied Surface Science
(A1 Refereed original research article in a scientific journal) - A Detailed Examination of Polysilicon Resistivity Incorporating the Grain Size Distribution (2025)
- IEEE transactions on electron devices
(A1 Refereed original research article in a scientific journal) - Area-Dependent Resistive Switching and Interfacial Dynamics in GCMO-Based Memristors (2025)
- ACS applied electronic materials
(A1 Refereed original research article in a scientific journal) - Below 1% Reflectance for Black GaAs Surface Prepared by Facile Two-Step Wet Chemical Treatment: Hydrogen Peroxide and Water (2025)
- Advanced photonics research
(A1 Refereed original research article in a scientific journal) - Effects of ultra-high vacuum treatments on n-type Si contact resistivity (2025)
- Applied Surface Science
(A1 Refereed original research article in a scientific journal) - Passivation of Germanium Surfaces by HF:H2O2 Aqueous Solution (2025)
- physica status solidi (RRL) - Rapid Research Letters
(A1 Refereed original research article in a scientific journal) - Potential of ultrahigh-vacuum based surface treatments in silicon technology (2025)
- Microelectronic Engineering
(A1 Refereed original research article in a scientific journal) - Surface Properties of p‐GaN and Formation of Nickel Metal Contacts (2025)
- Advanced Materials Interfaces
(A1 Refereed original research article in a scientific journal) - Transforming Schottky to Ohmic Contacts via Ultrahigh-Vacuum Engineered Interfacial Alloying (2025)
- ACS Applied Materials and Interfaces
(A1 Refereed original research article in a scientific journal) - Bridging the gap between surface physics and photonics (2024)
- Reports on Progress in Physics
(A2 Refereed review article in a scientific journal ) - Dry cleaning of InSb surfaces by hydrogen molecule exposure in ultrahigh vacuum (2024)
- Applied Surface Science
(A1 Refereed original research article in a scientific journal) - Modeling the Influence of Deposition Parameters on the Crystalline Degree in the Simulation of Polycrystalline Silicon (2024)
- physica status solidi (b)
(A1 Refereed original research article in a scientific journal) - Polycrystalline silicon, a molecular dynamics study: I. Deposition and growth modes (2024)
- Modelling and Simulation in Materials Science and Engineering
(A1 Refereed original research article in a scientific journal) - Polycrystalline silicon, a molecular dynamics study: II. Grains, grain boundaries and their structure (2024)
- Modelling and Simulation in Materials Science and Engineering
(A1 Refereed original research article in a scientific journal) - Atomic Level Chemical and Structural Properties of Silicon Surface and Initial Stages of Oxidation (2023)
- Solid State Phenomena
(A4 Refereed article in a conference publication ) - Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces (2023)
- Solid State Phenomena
(A1 Refereed original research article in a scientific journal) - Efficient surface passivation of germanium nanostructures with 1% reflectance (2023)
- Nanotechnology
(A1 Refereed original research article in a scientific journal) - Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium (2023)
- Applied Physics Letters
(A1 Refereed original research article in a scientific journal)



