A2 Refereed review article in a scientific journal
Bridging the gap between surface physics and photonics
Authors: Laukkanen Pekka, Punkkinen Marko, Kuzmin Mikhail, Kokko Kalevi, Liu Xiaolong, Radfar Behrad, Vähanissi Ville, Savin Hele, Tukiainen Antti, Hakkarainen Teemu, Viheriälä Jukka, Guina Mircea
Publisher: IOP Publishing Ltd
Publication year: 2024
Journal: Reports on Progress in Physics
Journal name in source: REPORTS ON PROGRESS IN PHYSICS
Journal acronym: REP PROG PHYS
Article number: 044501
Volume: 87
Issue: 4
Number of pages: 34
ISSN: 0034-4885
eISSN: 1361-6633
DOI: https://doi.org/10.1088/1361-6633/ad2ac9
Web address : https://iopscience.iop.org/article/10.1088/1361-6633/ad2ac9
Self-archived copy’s web address: https://research.utu.fi/converis/portal/detail/Publication/387434240
Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.
Downloadable publication This is an electronic reprint of the original article. |  |
