Pekka
Laukkanen obtained his MSc degree in 2000 at Tampere University of Technology
in the field of optoelectronics. He completed his PhD thesis in 2005 in the
area of surface physics at University of Turku. He is now working at interface
between surface science and semiconductor technology, trying to improve interconnection and collaboration between these fields. His expertise area
includes photoelectron spectroscopy, scanning tunneling microscopy, electron
diffraction, surface passivation, interface defects, and semiconductor technology. Laukkanen has published
130 refereed articles, four book chapters, and three patents.

We have investigated surface properties: chemical, electronic, and structural ones of semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED, RHEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy (including synchrotron sources). One goal has been to develop the connection or collaboration between the surface science and the semiconductor technology disciplines. More recently we have focused on the question how to decrease surface-related electrical losses and malfunctions in various semiconductor-based devices like capacitors, sensors, solar cells, and transistors. We have tried to understand reasons for formation of defect levels in device surfaces and to find controlled methods to decrease the amount of defect levels. 

Recently I have teched the following courses at the University of Turku:

- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)

- Electrical properties of solids (Kiinteän aineen sähköiset ominaisuudet)

- Semiconductors (Puolijohteet)

- Semiconductor spectroscopy (method course)