A1 Refereed original research article in a scientific journal
Below 1% Reflectance for Black GaAs Surface Prepared by Facile Two-Step Wet Chemical Treatment: Hydrogen Peroxide and Water
Authors: Jahanshah Rad, Zahra; Laaksonen, Johanna; Alitupa, Valtteri; Miettinen, Mikko; Iltanen, Kari; Lehtiö, Juha-Pekka; Granroth, Sari; Angervo, Ilari; Punkkinen, Marko; Punkkinen, Risto; Kuzmin, Mikhail; Mäkilä, Ermei; Laukkanen, Pekka; Paturi, Petriina; Kokko, Kalevi; Vuori, Sami; Lastusaari, Mika; Singh, Harishchandra; Huttula, Marko; Singh, Manvedra Narayan; Tukiainen, Antti; Tuorila, Heidi; Piirilä, Helmer; Viheriälä, Jukka; Guina, Mircea; Kozlova, Jekaterina; Rähn, Mihkel; Tamm, Aile
Publisher: WILEY
Publishing place: HOBOKEN
Publication year: 2025
Journal: Advanced photonics research
Journal name in source: ADVANCED PHOTONICS RESEARCH
Journal acronym: ADV PHOTON RES
Article number: 2400200
Number of pages: 9
eISSN: 2699-9293
DOI: https://doi.org/10.1002/adpr.202400200
Web address : https://doi.org/10.1002/adpr.202400200
Self-archived copy’s web address: https://research.utu.fi/converis/portal/detail/Publication/499204357
To increase performance of many photonic devices (e.g., solar cell, light emitting diode (LED), photodetector), it is essential to decrease light reflection at device interfaces. Sustainable and scalable methods have been intensively developed for manufacturing nanostructured antireflection coatings at device surfaces to reduce the reflection-induced losses in them. In this work, a novel wet chemical method is demonstrated to prepare black nanostructured GaAs surfaces in scalable manner. This facile method includes two steps: immersion of GaAs in hot H2O2 solution followed by immersion in hot H2O both at around 80 °C. Microscopy, spectroscopy, and diffraction measurements reveal that the H2O2 immersion increases a surface porosity at GaAs while the hot-water treatment causes the formation of GaOOH nanocrystals. Reflectivity at the resulting black GaAs surface is decreased even below 1% in a broadband. Photoluminescence intensity measurements are used to study whether the presented top-to-down method increases harmful non-radiative recombination, as compared to the initial GaAs surface. Integration of the found black-GaAs method with device manufacturing is presented by means of planar metal–GaAs–metal photodetectors, of which external quantum efficiency increases due to the method.
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Funding information in the publication:
This work has been supported by the University of Turku Graduate School (UTUGS), the Academy of Finland (via the project #296469), Business Finland (via the project RONASEC), and Wihuri Foundation (Z.J.R.). The XPS and SEM/EDX experiments were carried out using resources provided by Materials Research infrastructure (MARI). Wihuri Foundation is also acknowledged for supporting UTU clean room facilities. Open access publishing facilitated by Turun yliopisto, as part of the Wiley - FinELib agreement.
