A1 Refereed original research article in a scientific journal
Modeling the Influence of Deposition Parameters on the Crystalline Degree in the Simulation of Polycrystalline Silicon
Authors: Santonen, Mikael; Lahti, Antti; Srivastava, Divya; Jahanshah Rad, Zahra; Miettinen, Mikko; Ebrahimzadeh, Masoud; Laaksonen, Johanna; Laukkanen, Pekka; Punkkinen, Marko; Kokko, Kalevi; Kuronen, Antti; Parkkinen, Katja; Eklund, Markus
Publisher: WILEY-V C H VERLAG GMBH
Publishing place: WEINHEIM
Publication year: 2024
Journal: physica status solidi (b)
Journal name in source: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Journal acronym: PHYS STATUS SOLIDI B
Article number: 2400483
Number of pages: 9
ISSN: 0370-1972
eISSN: 1521-3951
DOI: https://doi.org/10.1002/pssb.202400483
Web address : https://onlinelibrary.wiley.com/doi/10.1002/pssb.202400483
Self-archived copy’s web address: https://research.utu.fi/converis/portal/detail/Publication/477938383
Polycrystalline silicon (poly-Si) has been and still is a pivotal material, particularly in the electronics and solar energy industries. Controlling crystallization is one of the challenges, e.g., in producing poly-Si films for radio frequency applications. Since film growth by deposition is a random process, producing a specific grain size distribution for poly-Si is challenging. By combining molecular dynamics simulation data with surface diffusion physics, novel transparent models are constructed that shed light on the physics behind the deposition of poly-Si thin films and assist the selection of simulation parameters. Both probabilistic and geometric approaches are used to find relevant simulation parameters and their bounds to describe the complex grain-grain boundary interactions in the growth of poly-Si thin films. Poly-Si growth simulations provide valuable information to better understand the features of optimal growth conditions. The constructed parameterized deposition model is fitted to the simulation data. In addition to further refining the simulation of customized poly-Si films, the presented modeling concept can also be used more generally in the analysis of physical vapor deposition.
Downloadable publication This is an electronic reprint of the original article. |  |
Funding information in the publication:
The work was supported by the Business Finland (project BEETLES TY 1320731/2021) and Okmetic Oy. The computer resources of the Finnish IT Center for Science (CSC) and the Finnish Computing Competence Infrastructure (FCCI) project (Finland) are acknowledged.
