A1 Refereed original research article in a scientific journal
Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces
Authors: Rad, Zahra Jahanshah; Miettinen, Mikko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Vähänissi, Ville; Savin, Hele
Editors: Paul Mertens, Antoine Pacco, Kurt Wostyn, Quoc Toan Le
Conference name: Ultra Clean Processing of Semiconductor Surfaces
Publisher: Trans Tech Publications Ltd
Publication year: 2023
Journal: Solid State Phenomena
Book title : Ultra Clean Processing of Semiconductor Surfaces XVI: Selected peer-reviewed full text papers from the 16th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS 2023)
Journal name in source: Solid State Phenomena
Series title: Solid State Phenomena
Volume: 346
First page : 57
Last page: 62
ISBN: 978-3-0364-0312-0
eISBN: 978-3-0364-1312-9
ISSN: 1012-0394
eISSN: 1662-9779
DOI: https://doi.org/10.4028/p-zJ2YOT
Web address : https://doi.org/10.4028/p-zJ2YOT
Ultrahigh vacuum (UHV) environment has been widely used in surface science, but UHV technology has been often considered too complex and expensive methodology for large-scale industrial use. Because the preparation of atomically smooth and clean Si surfaces has become relevant to some industrial processes, we have re-addressed the question if UHV could be utilized in these surface tasks using industrially feasible parameters. In particular, we have studied how UHV treatments might be combined with the widely used semiconductor cleaning methodology of wet chemistry.
