Pekka Laukkanen obtained his MSc degree in 2000 at Tampere University of Technology in the field of optoelectronics. He completed his PhD thesis in 2005 in the area of surface physics at University of Turku. He is now working at a boundary between surface science and semiconductor technology, trying to improve connection and collaboration between these two fields. His expertise area includes photoelectron spectroscopy, scanning tunneling microscopy, electron diffraction, surface passivation, interface defects, and semiconductor technology.

Our research group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy (including synchrotron sources). One goal has been to contribute bridging between the fields of surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor-based devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties, we have learned to manufacture simple devices in clean rooms. 

Recently I have teched the following courses at the University of Turku:

- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)

- Electrical properties of solids

- Semiconductors

- Semiconductor spectroscopy (method course)