A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces
Tekijät: Rad, Zahra Jahanshah; Miettinen, Mikko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Vähänissi, Ville; Savin, Hele
Toimittaja: Paul Mertens, Antoine Pacco, Kurt Wostyn, Quoc Toan Le
Konferenssin vakiintunut nimi: Ultra Clean Processing of Semiconductor Surfaces
Kustantaja: Trans Tech Publications Ltd
Julkaisuvuosi: 2023
Journal: Solid State Phenomena
Kokoomateoksen nimi: Ultra Clean Processing of Semiconductor Surfaces XVI: Selected peer-reviewed full text papers from the 16th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS 2023)
Tietokannassa oleva lehden nimi: Solid State Phenomena
Sarjan nimi: Solid State Phenomena
Vuosikerta: 346
Aloitussivu: 57
Lopetussivu: 62
ISBN: 978-3-0364-0312-0
eISBN: 978-3-0364-1312-9
ISSN: 1012-0394
eISSN: 1662-9779
DOI: https://doi.org/10.4028/p-zJ2YOT
Verkko-osoite: https://doi.org/10.4028/p-zJ2YOT
Ultrahigh vacuum (UHV) environment has been widely used in surface science, but UHV technology has been often considered too complex and expensive methodology for large-scale industrial use. Because the preparation of atomically smooth and clean Si surfaces has become relevant to some industrial processes, we have re-addressed the question if UHV could be utilized in these surface tasks using industrially feasible parameters. In particular, we have studied how UHV treatments might be combined with the widely used semiconductor cleaning methodology of wet chemistry.
