Pekka Laukkanen
peklau@utu.fi ORCID identifier: https://orcid.org/0000-0003-4220-985X |
surface science; semiconductor devices, surface passivation,
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Ytterbium/Silicon and Ytterbium/Germanium Interfaces: Earliest Stages of Formation (2020) Ytterbium: Characteristics, Production and Applications Kuzmin Mikhail, Laukkanen Pekka
(B2 Non-refereed book chapter or chapter in a compilation book) - INDICATING THE INTENSITY OF A PREDETERMINED TYPE OF RADIATION (2019) Laukkanen P., Lastusaari M., Norrbo I.
(Other publication) - Observation of Crystalline Oxidized Silicon Phase (2019)
- Advanced Materials Interfaces
(A1 Refereed original research article in a scientific journal) - Preparation and Characterization of Oxide/Semiconductor Interfaces (2019) Advanced Nanomaterials for Solar Cells and Light Emitting Diodes Pekka Laukkanen, Mikhail Kuzmin
(A3 Refereed book chapter or chapter in a compilation book) - Unusual oxidation-induced core-level shifts at the HfO2/InP interface (2019)
- Scientific Reports
(A1 Refereed original research article in a scientific journal) - Crystalline and oxide phases revealed and formed on InSb(111)B (2018)
- Scientific Reports
(A1 Refereed original research article in a scientific journal) - Electronic structure and relative stability of the coherent and semi-coherent HfO2/III-V interfaces (2018)
- Applied Surface Science
(A1 Refereed original research article in a scientific journal) - Imaging empty states on the Ge(100) surface at 12 K (2018)
- Physical Review B
(A1 Refereed original research article in a scientific journal) - Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing (2018)
- ACS Applied Materials and Interfaces
(A1 Refereed original research article in a scientific journal) - SILICON-ON-INSULATOR WITH CRYSTALLINE SILICON OXIDE (2018) Laukkanen P., Kuzmin M., Mäkelä J., Tuominen M., Punkkinen M., Lahti A., Kokko K., Lehtiö J.-P.
(Other publication) - Solar UV index and UV dose determination with photochromic hackmanites: from the assessment of the fundamental properties to the device (2018)
- Materials Horizons
(A1 Refereed original research article in a scientific journal) - Surface doping of GaxIn1−xAs semiconductor crystals with magnesium (2018)
- Materialia
(A1 Refereed original research article in a scientific journal) - Wet etching of dilute nitride GaInNAs, GaInNAsSb, and GaNAsSb alloys lattice-matched to GaAs (2018)
- Corrosion Science
(A1 Refereed original research article in a scientific journal) - A prospective submonolayer template structure for integration of functional oxides with silicon (2017)
- Materials and Design
(A1 Refereed original research article in a scientific journal) - Decreasing Defect-State Density of Al2O3/GaxIn1- xAs Device Interfaces with InOx Structures (2017)
- Advanced Materials Interfaces
(A1 Refereed original research article in a scientific journal) - Glowing synthetic chlorohectorite: The luminescent features of a trioctahedral clay mineral (2017)
- Journal of Luminescence
(A1 Refereed original research article in a scientific journal) - Lanthanide and Heavy Metal Free Long White Persistent Luminescence from Ti Doped Li-Hackmanite: A Versatile, Low-Cost Material (2017)
- Advanced Functional Materials
(A1 Refereed original research article in a scientific journal) - Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations (2017)
- Applied Surface Science
(A1 Refereed original research article in a scientific journal) - Comparison of Chemical, Electronic, and Optical Properties of Mg-Doped AlGaN (2016)
- Journal of Physical Chemistry C
(A1 Refereed original research article in a scientific journal) - Mechanisms of Tenebrescence and Persistent Luminescence in Synthetic Hackmanite Na8Al6Si6O24(Cl,S)(2) (2016)
- ACS Applied Materials and Interfaces
(A1 Refereed original research article in a scientific journal)



