Pekka Laukkanen
peklau@utu.fi ORCID identifier: https://orcid.org/0000-0003-4220-985X |
surface science; semiconductor devices, surface passivation,
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium (2023)
- Applied Physics Letters
(A1 Refereed original research article in a scientific journal) - Properties and modification of native oxides of InP(100) (2023)
- Journal of Physics D: Applied Physics
(A1 Refereed original research article in a scientific journal) - Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Quality (2023)
- physica status solidi (a)
(A1 Refereed original research article in a scientific journal) - Reversible oxygen-driven c(4 x 4) ↔ (1 x 2) phase transition on the Ba/Ge (100) surface (RETRACTED) (2023)
- Applied Surface Science
(Other publication) - Surface Passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayer (2023)
- Crystals
(A1 Refereed original research article in a scientific journal) - Wet Chemical Treatment and Mg Doping of p-InP Surfaces for Ohmic Low-Resistive Metal Contacts (2023)
- Advanced Engineering Materials
(A1 Refereed original research article in a scientific journal) - Controlling the fixed negative charge formation in Si/high-k interfaces (2022)
- Physical Review Materials
(A1 Refereed original research article in a scientific journal) - Effects of post oxidation of SiO2/Si interfaces in ultrahigh vacuum below 450 °C (2022)
- Vacuum
(A1 Refereed original research article in a scientific journal) - Effects of thermal vacuum nitridation of Si(100) surface via NH3 exposure (2022)
- Thin Solid Films
(A1 Refereed original research article in a scientific journal) - Reusable radiochromic hackmanite with gamma exposure memory (2022)
- Materials Horizons
(A1 Refereed original research article in a scientific journal)



