A1 Refereed original research article in a scientific journal
Wet etching of dilute nitride GaInNAs, GaInNAsSb, and GaNAsSb alloys lattice-matched to GaAs
Authors: Marianna Raappana, Ville Polojärvi, Arto Aho, Jaakko Mäkelä, Timo Aho, Antti Tukiainen, Pekka Laukkanen, Mircea Guina
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Publication year: 2018
Journal: Corrosion Science
Journal name in source: CORROSION SCIENCE
Journal acronym: CORROS SCI
Volume: 136
First page : 268
Last page: 274
Number of pages: 7
ISSN: 0010-938X
eISSN: 1879-0496
DOI: https://doi.org/10.1016/j.corsci.2018.03.018
Abstract
We have studied the etching of GaInNAs, GaInNAsSb, and GaNAsSb alloys by NH4OH, H2SO4, and H3PO4 based solutions. NH4OH based solutions resulted in smooth surface, while other solutions created rougher and granular surfaces. The etch rates were found to increase with the Sb content. For GaInNAs, x-ray photoelectron spectroscopy revealed the enrichment of In on the etched surfaces, indicating In or In oxides having a smaller removal rate compared to Ga or Ga oxides. The enrichment of In was associated with smoother surfaces after etching and an enhanced photoluminescence caused by lower surface recombination due to reduced surface state density.
We have studied the etching of GaInNAs, GaInNAsSb, and GaNAsSb alloys by NH4OH, H2SO4, and H3PO4 based solutions. NH4OH based solutions resulted in smooth surface, while other solutions created rougher and granular surfaces. The etch rates were found to increase with the Sb content. For GaInNAs, x-ray photoelectron spectroscopy revealed the enrichment of In on the etched surfaces, indicating In or In oxides having a smaller removal rate compared to Ga or Ga oxides. The enrichment of In was associated with smoother surfaces after etching and an enhanced photoluminescence caused by lower surface recombination due to reduced surface state density.
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