Other publication
SILICON-ON-INSULATOR WITH CRYSTALLINE SILICON OXIDE
Authors: Laukkanen P., Kuzmin M., Mäkelä J., Tuominen M., Punkkinen M., Lahti A., Kokko K., Lehtiö J.-P.
Publication year: 2018
Web address : https://fi.espacenet.com/publicationDetails/biblio?DB=EPODOC&II=0&ND=3&adjacent=true&locale=fi_FI&FT=D&date=20181222&CC=FI&NR=20175587A&KC=A
A method (100) for forming a semiconductor structure (200) comprising a silicon-on- insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing (120) a crystalline silicon substrate (201) having a substantially clean deposition surface (202) in a vacuum chamber; heating (130) the silicon substrate to an oxidation temperature To in the range of 550 to 1200, 550 to 1000, or 550 to 850 °C; supplying (140), while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1.10-8 to 1.10-4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer (204) with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer (203) and a crystalline silicon top layer (205).
