Pekka Laukkanen
peklau@utu.fi ORCID-tunniste: https://orcid.org/0000-0003-4220-985X |
pintatiede; puolijohde; pinnan passivointi; ohutkalvot
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- (2012)
- Surface ScienceApplied Physics Letters
- Surface Studies by Low-Energy Electron Diffraction and Reflection High-Energy-Electron DiffractionCore-level shifts of the c(8x2)-reconstructed InAs(100) and InSb(100) surfaces (2012) Laukkanen P, Sadowski J, Guina M
(A3 Vertaisarvioitu kirjan tai muun kokoomateoksen osa) - Synthesis and characterization of solid base mesoporous and microporous catalysts: Influence of the support, structure and type of base metal (2012)
- Microporous and Mesoporous MaterialsApplied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - The role of MBE growth temperature (2012) Korpijärvi V-M, Aho A, Laukkanen P, Tukiainen A, Laakso A, Tuominen M, Guina M
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Dimer-T3 reconstruction of the Sm/Si(100)(2x3) surface studied by high-resolution photoelectron spectroscopy and density functional theory calculations (2011)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces (2011)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations (2011)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Properties of the SiO2- and SiNx- capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence (2011)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Surface core-level shifts on Ge(111)c(2x8): Experiment and theory (2011)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Tin stabilized (1×2) and (1×4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations (2011)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides (2011)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Ab initio and scanning tunneling microscopy study of an indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c(8x2) structure (2010)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Atomic structure of Yb/Si(100)(2x6): Interrelation between the silicon dimer arrangement and Si 2p photoemission line shape (2010)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Bismuth-stabilized c(2x6) reconstruction on a InSb(100) substrate: Violation of the electron counting model (2010)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of the enhancement of photoluminescence (2010)
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - (2010)
- Journal of Electron Spectroscopy and Related Phenomena
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping on 1.3: GaInAsN/GaAs quantum well structures (2010)
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Metamorphic growth of tensile strained GaInP on GaAs substrate (2010)
- Journal of Crystal Growth
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Picosecond pulse laser ablation of yttria-stabilized zirconia from kilohertz to megahertz repetition rates (2010)
- Applied Physics A
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Stability, structural, and electronic properties of atomic chains on Yb/Ge(111)3X2 studied by STM and STS (2010)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä )



