Pekka Laukkanen
peklau@utu.fi ORCID-tunniste: https://orcid.org/0000-0003-4220-985X |
pintatiede; puolijohde; pinnan passivointi; ohutkalvot
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Atomic structure and thermally induced transformation of the crystalline BaO/Si(100) junctionSingle-step fabrication of luminescent GaAs nanocrystals by pulsed laser ablation in liquids (2014)
- Physical Review BOptical Materials Express
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Bismuth-containing c(4x4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations (2014)
- Journal of Electron Spectroscopy and Related PhenomenaSurface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Comparative study of spin injection and transport in Alq3 and Co-phthalocyanine-based organic spin valves (2014)
- SPIN
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells (2014)
- Solar Energy Materials and Solar Cells
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Does Bi form clusters in GaAs1-xBix alloys? (2014)
- Semiconductor Science and Technology
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing (2014)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Synthesis and Characterization of Layered Tin Monoxide Thin Films with Monocrystalline Structure on III–V Compound Semiconductor (2014)
- Advanced Materials Interfaces
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O (2014)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Growth and properties of crystalline barium oxide on the GaAs(100) substrate (2013)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Isomerization of α-Pinene Oxide Over Iron-Modified Zeolites (2013)
- Topics in Catalysis
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Isomerization of β-pinene oxide over Sn-modified zeolites (2013)
- Journal of Molecular Catalysis A: Chemical
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Photoemission and density functional theory study of Ge(100): Clean surface and Yb-induced (2x4) reconstruction (2013)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Surface and interfacial reaction study of InAs(100)-crystalline oxide interface (2013)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Unusual Bi-Containing Surface Layers of III-V Compound Semiconductors (2013) Bismuth-Containing Compounds Pekka Laukkanen, Marko Punkkinen
(A3 Vertaisarvioitu kirjan tai muun kokoomateoksen osa) - Variation of lattice constant and cluster formation in annealed GaAsBi (2013)
- Journal of Applied Physics
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - A METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE (2012) P. Laukkanen, J. Lång, M. Punkkinen, M. Tuominen, V. Tuominen; J. Dahl, J. Väyrynen
(O2 Muu julkaisu ) - Formation and destabilization of Ga interstitials in GaAsN: Experiment and theory (2012)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Formation of polar InN with surface Fermi level near the valence band maximum by means of ammonia nitridation (2012)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - (2012)
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Structure of ordered oxide on InAs(100) surface (2012)
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä )



