Pekka Laukkanen
peklau@utu.fi ORCID-tunniste: https://orcid.org/0000-0003-4220-985X |
pintatiede; puolijohde; pinnan passivointi; ohutkalvot
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Indicating the intensity of a predetermined type of radiation (2020) Lastusaari M., Norrbo I., Laukkanen P.
(O2 Muu julkaisu ) - Ytterbium/Silicon and Ytterbium/Germanium Interfaces: Earliest Stages of Formation (2020) Ytterbium: Characteristics, Production and Applications Kuzmin Mikhail, Laukkanen Pekka
(B2 Vertaisarvioimaton kirjan tai muun kokoomateoksen osa) - INDICATING THE INTENSITY OF A PREDETERMINED TYPE OF RADIATION (2019) Laukkanen P., Lastusaari M., Norrbo I.
(O2 Muu julkaisu ) - Observation of Crystalline Oxidized Silicon Phase (2019)
- Advanced Materials Interfaces
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Preparation and Characterization of Oxide/Semiconductor Interfaces (2019) Advanced Nanomaterials for Solar Cells and Light Emitting Diodes Pekka Laukkanen, Mikhail Kuzmin
(A3 Vertaisarvioitu kirjan tai muun kokoomateoksen osa) - Unusual oxidation-induced core-level shifts at the HfO2/InP interface (2019)
- Scientific Reports
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Crystalline and oxide phases revealed and formed on InSb(111)B (2018)
- Scientific Reports
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Electronic structure and relative stability of the coherent and semi-coherent HfO2/III-V interfaces (2018)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Imaging empty states on the Ge(100) surface at 12 K (2018)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing (2018)
- ACS Applied Materials and Interfaces
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä )



