A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Growth and properties of crystalline barium oxide on the GaAs(100) substrate
Tekijät: M Yasir, J Dahl, M Kuzmin, J Lång, M Tuominen, M P J Punkkinen, P Laukkanen, K Kokko, V-M Korpijärvi, V Polojärvi, M Guina
Julkaisuvuosi: 2013
Journal: Applied Physics Letters
Numero sarjassa: 19
Vuosikerta: 103
Numero: 19
Aloitussivu: 191601
Sivujen määrä: 4
ISSN: 0003-6951
DOI: https://doi.org/10.1063/1.4828794
Verkko-osoite: http://scitation.aip.org/content/aip/journal/apl/103/19/10.1063/1.4828794
Tiivistelmä
Growing a crystalline oxide film on III-V semiconductor renders possible approaches to improve operation of electronics and optoelectronics heterostructures such as oxide/semiconductor junctions for transistors and window layers for solar cells. We demonstrate the growth of crystalline barium oxide (BaO) on GaAs(100) at low temperatures, even down to room temperature. Photoluminescence (PL) measurements reveal that the amount of interface defects is reduced for BaO/GaAs, compared to Al2O3/GaAs, suggesting that BaO is a useful buffer layer to passivate the surface of the III-V device material. PL and photoemission data show that the produced junction tolerates the post heating around 600 °C.
Growing a crystalline oxide film on III-V semiconductor renders possible approaches to improve operation of electronics and optoelectronics heterostructures such as oxide/semiconductor junctions for transistors and window layers for solar cells. We demonstrate the growth of crystalline barium oxide (BaO) on GaAs(100) at low temperatures, even down to room temperature. Photoluminescence (PL) measurements reveal that the amount of interface defects is reduced for BaO/GaAs, compared to Al2O3/GaAs, suggesting that BaO is a useful buffer layer to passivate the surface of the III-V device material. PL and photoemission data show that the produced junction tolerates the post heating around 600 °C.
Turun yliopiston Tutkimustietojärjestelmän portaali