The recombination rates of D atoms in solid D₂ films were measured in the temperature range 0.23–1.64 K. Atoms were formed in thin D₂ films by maintaining radio-frequency discharge above the film surface for several days. After stopping discharge the decay of D atoms concentrations was monitored at different temperatures by the method of electron spin resonance (ESR). Decreasing the films temperature from 1.64 to 0.23 K resulted in reducing the recombination rate from 7.2 × 10⁻²⁶ cm³s⁻¹ to 1.0 × 10⁻²⁷ cm³s⁻¹.