Risto Punkkinen
PhD
rpunk@utu.fi |
Semiconductor technology; electrical characterization of semiconductor materials; electrical characterization electronic components; sensor technology; diode based particle detectors
Semiconductor technology
Risto Punkkinen (born 1951) received his MSc degree in physics from the University of Turku,Finland in 1976 and received his PhD in physics from the University of Turku, Finland 1990. Since then he has worked at the university almost all the time mainly in teaching. He has retired in August 2021. After that he has worked as a part-time researcher in Academy of project Foresail and worked as a part-time teacher teaching basic courses in electronics.
My reseach has concentrated on semiconductor technology and measuring technology.
One object was to study the possiblity of manufacturing silicon-based laser.
In sensor technology, we succeeded in manufacturing a sensor on a silicon substrate that is capable of detecting very low hydrogen concentrations in air.
Our laboratory laboratory has produced and measured the main particle diode dectectors used in Academy’s Foresail satellite project to be used in space. Also the setup of the particle detector system PATE was finalized in the clean room.
Material science: trying to improve the properties of a MOSFET by using different materials in order to improve the mobility of electrons and holes.
Teaching has covered the basic and advanced courses in electronics and semiconductor technology and being responsible of them.
- Effects of ultra-high vacuum treatments on n-type Si contact resistivity (2025)
- Applied Surface Science
- Properties and modification of native oxides of InP(100) (2023)
- Journal of Physics D: Applied Physics
- Wet Chemical Treatment and Mg Doping of p-InP Surfaces for Ohmic Low-Resistive Metal Contacts (2023)
- Advanced Engineering Materials
- Controlling the fixed negative charge formation in Si/high-k interfaces (2022)
- Physical Review Materials
- Effects of post oxidation of SiO2/Si interfaces in ultrahigh vacuum below 450 °C (2022)
- Vacuum
- Effects of thermal vacuum nitridation of Si(100) surface via NH3 exposure (2022)
- Thin Solid Films
- The Effect of Ultraviolet Treatment on TiO2 Nanotubes: A Study of Surface Characteristics, Bacterial Adhesion, and Gingival Fibroblast Response (2022)
- Metals
- Aalto-1, multi-payload CubeSat: design, integration and launch (2021)
- Acta Astronautica
- Aalto-1, multi-payload CubeSat: In-orbit results and lessons learned (2021)
- Acta Astronautica
- Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying (2021)
- ACS Materials Au
- Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge (2021)
- Advanced Electronic Materials
- Calibration of RADMON radiation monitor onboard Aalto-1 CubeSat (2020)
- Advances in Space Research
- Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 degrees C (2020)
- ACS Applied Materials and Interfaces
- Particle telescope aboard FORESAIL-1: Simulated performance (2020)
- Advances in Space Research
- Radiation monitor RADMON aboard Aalto-1 CubeSat: First results (2020)
- Advances in Space Research
- Clinical assessment of a non-invasive wearable MEMS pressure sensor array for monitoring of arterial pulse waveform, heart rate and detection of atrial fibrillation (2019)
- npj Digital Medicine
- FORESAIL‐1 CubeSat Mission to Measure Radiation Belt Losses and Demonstrate Deorbiting (2019)
- Journal of Geophysical Research: Space Physics
A. Osmane, E. Palmerio, J. Peltonen, Y. Pfau‐Kempf, J. Plosila, J. Polkko, S. Poluianov, J. Pomoell, D. Price, A. Punkkinen, R. Punkkinen, B. Riwanto, L. Salomaa, A. Slavinskis, T. Säntti, J. Tammi, H. Tenhunen, P. Toivanen, J. Tuominen, L. Turc, E. Valtonen, P. Virtanen, T. Westerlund - Observation of Crystalline Oxidized Silicon Phase (2019)
- Advanced Materials Interfaces
- Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing (2018)
- ACS Applied Materials and Interfaces
- Fabrication of a thin silicon detector with excellent thickness uniformity (2016)
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment