Risto Punkkinen
PhD
Semiconductor technology; electrical characterization of semiconductor materials; electrical characterization electronic components; sensor technology; diode based particle detectors
Semiconductor technology
Risto Punkkinen (born 1951) received his MSc degree in physics from the University of Turku,Finland in 1976 and received his PhD in physics from the University of Turku, Finland 1990. Since then he has worked at the university almost all the time mainly in teaching. He has retired in August 2021. After that he has worked as a part-time researcher in Academy of project Foresail and worked as a part-time teacher teaching basic courses in electronics.
My reseach has concentrated on semiconductor technology and measuring technology.
One object was to study the possiblity of manufacturing silicon-based laser.
In sensor technology, we succeeded in manufacturing a sensor on a silicon substrate that is capable of detecting very low hydrogen concentrations in air.
Our laboratory laboratory has produced and measured the main particle diode dectectors used in Academy’s Foresail satellite project to be used in space. Also the setup of the particle detector system PATE was finalized in the clean room.
Material science: trying to improve the properties of a MOSFET by using different materials in order to improve the mobility of electrons and holes.
Teaching has covered the basic and advanced courses in electronics and semiconductor technology and being responsible of them.
- Clinical assessment of a non-invasive wearable MEMS pressure sensor array for monitoring of arterial pulse waveform, heart rate and detection of atrial fibrillation (2019)
- npj Digital Medicine
(A1 Refereed original research article in a scientific journal) - FORESAIL‐1 CubeSat Mission to Measure Radiation Belt Losses and Demonstrate Deorbiting (2019)
- Journal of Geophysical Research: Space Physics
A. Osmane, E. Palmerio, J. Peltonen, Y. Pfau‐Kempf, J. Plosila, J. Polkko, S. Poluianov, J. Pomoell, D. Price, A. Punkkinen, R. Punkkinen, B. Riwanto, L. Salomaa, A. Slavinskis, T. Säntti, J. Tammi, H. Tenhunen, P. Toivanen, J. Tuominen, L. Turc, E. Valtonen, P. Virtanen, T. Westerlund
(A1 Refereed original research article in a scientific journal) - Observation of Crystalline Oxidized Silicon Phase (2019)
- Advanced Materials Interfaces
(A1 Refereed original research article in a scientific journal) - Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing (2018)
- ACS Applied Materials and Interfaces
(A1 Refereed original research article in a scientific journal) - Fabrication of a thin silicon detector with excellent thickness uniformity (2016)
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
(A1 Refereed original research article in a scientific journal) - Hydrogen sensor of Pd-decorated tubular TiO2 layer prepared by anodization with patterned electrodes on SiO2/Si substrate (2016)
- Sensors and Actuators B: Chemical
(A1 Refereed original research article in a scientific journal) - Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions (2016)
- Advanced Materials Interfaces
(A1 Refereed original research article in a scientific journal) - Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction (2015)
- Physical Review B
(A1 Refereed original research article in a scientific journal) - Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction (2015)
- Physical Chemistry Chemical Physics
(A1 Refereed original research article in a scientific journal) - Effect of UV on wettability and bacterial adhesion of TiO2-nanotubes (2014)
- Dental Materials
(Other publication)



