Pekka Laukkanen
peklau@utu.fi ORCID-tunniste: https://orcid.org/0000-0003-4220-985X |
pintatiede; puolijohde; pinnan passivointi; ohutkalvot
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Formation of ytterbium silicide nanowires on Si(001) (2003)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Initial stages of Yb/Si(100) interface growth: 2x3 and 2x6 reconstructions (2003)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Investigation of the surface topography and double layer characteristics of variously pre-treated antimony single crystal electrodes (2003)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Ruthenium-modified MCM-41 mesoporous molecular sieve and Y zeolite catalysts for selective hydrogenation of cinnamaldehyde (2003)
- Applied Catalysis A: General
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Scanning tunneling microscopy study of GaAs(100) surface prepared by HCl-isopropanol treatment (2003)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Two series of triple- and single-domain reconstructions induced by europium on vicinal Si(111)[112]-miscut surface (2003)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Yb, Eu, and (Yb+Eu)-stabilized 3x1 and 3x2 reconstructions on Si(111) (2003)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - 1.32 um GaInNAs / GaAs laser with a low threshold current density (2002)
- IEEE Photonics Technology Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - An effect of vicinal surface morphology on adsorbate structure: Yb growth on [112]-tilt Si(111) (2002)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - A new heterogeneously catalytic pathway for isomerization of linoleic acid over Ru/C and Ni/H-MCM-41 catalysts (2002)
- Journal of Catalysis
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Enhanced optical and structural properties of strain-compensated 1.3 um GaInNAs / GaNAs / GaAs quantum well laser structures (2002)
- Journal of Crystal Growth
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire (2002)
- Journal of Applied Physics
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Emission studies of InGaN layers and LEDs grown by plasma-assisted MBE (2001)
- Journal of Crystal Growth
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Low threshold current 1.32 um GaInNAs / GaAs single quantum well lasers grown by molecular beam epitaxy (2001)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Growth of gallium nitride films by molecular beam epitaxy (2000) P. Laukkanen
(G2 Pro gradu, diplomityö, YAMK-opinnäytetyö) - Plasma-assisted MBE growth of GaN on HVPE-GaN substrates (1999)
- physica status solidi (c)
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä )



