Pekka Laukkanen
peklau@utu.fi ORCID-tunniste: https://orcid.org/0000-0003-4220-985X |
pintatiede; puolijohde; pinnan passivointi; ohutkalvot
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Mechanisms of Tenebrescence and Persistent Luminescence in Synthetic Hackmanite Na8Al6Si6O24(Cl,S)(2) (2016)
- ACS Applied Materials and Interfaces
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Origin of Fermi-level pinning and its control on the n-type Ge(100) surface (2016)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Quantitative description of short-range order and its influence on the electronic structure in Ag-Pd alloys (2016)
- Journal of Physics: Condensed Matter
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Sr/Si(100)(1 × 2) reconstruction as a template for the growth of crystalline high-k films on silicon: Atomic structure and reactivity (2016)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Thermally assisted oxidation of GaSb(100) and the effect of initial oxide phases (2016)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions (2016)
- Advanced Materials Interfaces
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Toward Versatile Sr2FeMoO6-Based Spintronics by Exploiting Nanoscale Defects (2016)
- ACS Applied Materials and Interfaces
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Effects of thinning and heating for TiO2/AlInP junctions (2015)
- Journal of Electron Spectroscopy and Related Phenomena
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Interfacial Properties of Organic Semiconductor-Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition (2015)
- ACS Applied Materials and Interfaces
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Line shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III-V semiconductors (2015)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä )



