Pekka Laukkanen
peklau@utu.fi ORCID-tunniste: https://orcid.org/0000-0003-4220-985X |
pintatiede; puolijohde; pinnan passivointi; ohutkalvot
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Annealing of self-assembled InAs/GaAs quantum dots: a stabilizing effect of beryllium doping (2009)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Core-level shifts of InP(100)(2x4) surface: Theory and experiment (2009)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Stability of rare earth metal atom induced (2x3) reconstructions on Si(100) surface (2009)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells (2009) R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, M. Pessa
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Ytterbium on vicinal Si(100): Growth and properties of the 2D wetting layer and the Yb silicide phase (2009)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - A comparative study of the effect of applied As flux on the growth of GaAs / AlAs quantum wells.
Applied Surface Science (2008)- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Anomalous Bismuth-Stabilized (2x1) Reconstructions on GaAs(100) and InP(100) Surfaces (2008)
- Physical Review Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Bismuth-stabilized (2x1) and (2x4) reconstructions on the III-V(100) surfaces: A combined first-principles and photoemission and scanning-tunneling-microscopy study (2008)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Formation of an ordered pattern of Bi nanolines on InAs(100) by self-assembly (2008)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Post-annealing of InGaAs / GaAs and InGaAsN / GaAs triple quantum-well structures with a modified proximity GaAs cap: A dramatic effect on the optical and structural properties (2008)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Suppression of annealing-induced In diffusion in Be-doped GaInNAs / GaAs quantum wells (2008)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Surface core-level shifts within complete screening: problems with pseudohydrogenated slabs (2008)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Yb-induced (2x3) and (2x4) reconstructions on Si(100) studied by STM, high-resolution core-level photoelectron spectroscopy, and first-principles calculations (2008)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - A comparative study of clean and Bi-stabilized InP(100)(2 x 4) surfaces by the core-level photoelectron spectroscopy (2007)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Atomic and electronic structure of the Yb/Ge(111)-(3 x 2) surface studied by high-resolution photoelectron spectroscopy (2007)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Atomic geometry and electronic properties of the Ge(111)2 x 1-Sb surface studied by scanning tunneling microscopy/spectroscopy and core-level photoemission. (2007)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - High-resolution core-level photoemission study of Ge(111)2 x 1-Sb and Ge(111)(√3 x √3)R30º-Bi reconstructions (2007)
- Journal of Electron Spectroscopy and Related Phenomena
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Structural properties of Bi-stabilized reconstructions of GaInAs(100) surface (2007)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Surface core-level shift of Pd at the AgPd1-c (111) surface: Nonlinear subsurface effects. (2007)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Surface core-level shifts of GaAs(100)(2 x 4) from first principles. (2007)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä )



