Pekka Laukkanen
peklau@utu.fi ORCID identifier: https://orcid.org/0000-0003-4220-985X |
surface science; semiconductor devices, surface passivation,
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Isomerization of α-Pinene Oxide Over Iron-Modified Zeolites (2013)
- Topics in Catalysis
(A1 Refereed original research article in a scientific journal) - Isomerization of β-pinene oxide over Sn-modified zeolites (2013)
- Journal of Molecular Catalysis A: Chemical
(A1 Refereed original research article in a scientific journal) - Photoemission and density functional theory study of Ge(100): Clean surface and Yb-induced (2x4) reconstruction (2013)
- Surface Science
(A1 Refereed original research article in a scientific journal) - Surface and interfacial reaction study of InAs(100)-crystalline oxide interface (2013)
- Applied Physics Letters
(A1 Refereed original research article in a scientific journal) - Unusual Bi-Containing Surface Layers of III-V Compound Semiconductors (2013) Bismuth-Containing Compounds Pekka Laukkanen, Marko Punkkinen
(A3 Refereed book chapter or chapter in a compilation book) - Variation of lattice constant and cluster formation in annealed GaAsBi (2013)
- Journal of Applied Physics
(A1 Refereed original research article in a scientific journal) - A METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE (2012) P. Laukkanen, J. Lång, M. Punkkinen, M. Tuominen, V. Tuominen; J. Dahl, J. Väyrynen
(Other publication) - Formation and destabilization of Ga interstitials in GaAsN: Experiment and theory (2012)
- Physical Review B
(A1 Refereed original research article in a scientific journal) - Formation of polar InN with surface Fermi level near the valence band maximum by means of ammonia nitridation (2012)
- Physical Review B
(A1 Refereed original research article in a scientific journal) - Single-step fabrication of luminescent GaAs nanocrystals by pulsed laser ablation in liquids (2012)
- Optical Materials Express
(A1 Refereed original research article in a scientific journal)



