Other publication
A METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE
Authors: P. Laukkanen, J. Lång, M. Punkkinen, M. Tuominen, V. Tuominen; J. Dahl, J. Väyrynen
Publication year: 2012
Web address : https://fi.espacenet.com/publicationDetails/biblio?II=13&ND=4&adjacent=true&locale=fi_FI&FT=D&date=20120518&CC=WO&NR=2012062966A1&KC=A1#
A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing lll-As, lll-Sb or lll-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550 °C and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
