materiaalitutkimuksen laboratorio
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- Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing (2018)
- Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy (2015)
- Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction (2015)
- Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy (2015)
- Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces (2011)
- Oxygen adsorption on (100) surfaces in Fe-Cr alloys (2021)
- Passivation of Germanium Surfaces by HF:H2O2 Aqueous Solution (2025)
- Passivation of III-V surfaces with crystalline oxidation (2021)
- Performance and characterization of the FinEsuseAMS beamline at the MAX IV Laboratory (2021)
- Persistent photoinduced magnetization in the coexisting spin-glass and ferromagnetic phases of Pr0.9Ca0.1MnO3 thin film (2011)
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