All-dielectric GaN microcavity: Strong coupling and lasing at room temperature

: Daskalakis K. S.; Eldridge P. S.; Christmann G.; Trichas E.; Murray R.; Iliopoulos E.; Monroy E.; Pelekanos N. T.; Baumberg J. J.; Savvidis P. G.

Publisher: AIP Publishing

: 2013

Applied Physics Letters

: APPL PHYS LETT

: ARTN 101113

: 102

: 10

: 3

: 0003-6951

: 1077-3118

DOI: https://doi.org/10.1063/1.4795019

: https://doi.org/10.1063/1.4795019

The strong light-matter coupling regime and lasing in a GaN microcavity fabricated by incorporating a high optical quality GaN membrane inside an all-dielectric mirror cavity is demonstrated at room temperature. A nonlinear increase of the emission and line narrowing marks the onset of polariton lasing regime with significantly reduced threshold compared with previous reports for bulk GaN microcavity. This combination of low lasing thresholds and ease of fabrication allows incorporation of quantum wells and electrical contacts into the active region, paving the way for electrically driven room temperature (RT) polariton laser devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795019]