A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
All-dielectric GaN microcavity: Strong coupling and lasing at room temperature
Tekijät: Daskalakis K. S.; Eldridge P. S.; Christmann G.; Trichas E.; Murray R.; Iliopoulos E.; Monroy E.; Pelekanos N. T.; Baumberg J. J.; Savvidis P. G.
Kustantaja: AIP Publishing
Julkaisuvuosi: 2013
Lehti:: Applied Physics Letters
Tietokannassa oleva lehden nimi: Applied Physics Letters
Lehden akronyymi: APPL PHYS LETT
Artikkelin numero: ARTN 101113
Vuosikerta: 102
Numero: 10
Sivujen määrä: 3
ISSN: 0003-6951
eISSN: 1077-3118
DOI: https://doi.org/10.1063/1.4795019
Verkko-osoite: https://doi.org/10.1063/1.4795019
Tiivistelmä
The strong light-matter coupling regime and lasing in a GaN microcavity fabricated by incorporating a high optical quality GaN membrane inside an all-dielectric mirror cavity is demonstrated at room temperature. A nonlinear increase of the emission and line narrowing marks the onset of polariton lasing regime with significantly reduced threshold compared with previous reports for bulk GaN microcavity. This combination of low lasing thresholds and ease of fabrication allows incorporation of quantum wells and electrical contacts into the active region, paving the way for electrically driven room temperature (RT) polariton laser devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795019]
The strong light-matter coupling regime and lasing in a GaN microcavity fabricated by incorporating a high optical quality GaN membrane inside an all-dielectric mirror cavity is demonstrated at room temperature. A nonlinear increase of the emission and line narrowing marks the onset of polariton lasing regime with significantly reduced threshold compared with previous reports for bulk GaN microcavity. This combination of low lasing thresholds and ease of fabrication allows incorporation of quantum wells and electrical contacts into the active region, paving the way for electrically driven room temperature (RT) polariton laser devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795019]
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