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Preferentially oriented SrTiO3 thin films grown on lanthanide-assisted Si(001) via pulsed laser deposition




TekijätRijckaert, Hannes; Latronico, Giovanna; Deduytsche, Davy; Solano, Eduardo; Paturi, Petriina; Mele, Paolo

KustantajaRoyal Society of Chemistry (RSC)

Julkaisuvuosi2026

Lehti: Journal of Materials Chemistry. C

ISSN2050-7526

eISSN2050-7534

DOIhttps://doi.org/10.1039/d5tc03382a

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Julkaisukanavan avoimuus Osittain avoin julkaisukanava

Verkko-osoitehttps://doi.org/10.1039/d5tc03382a

Rinnakkaistallenteen osoitehttps://research.utu.fi/converis/portal/detail/Publication/506486516


Tiivistelmä

The integration of high-quality SrTiO3 thin films on silicon substrates is crucial for various applications. This work investigates the use of an out-of-plane, self-oriented La2O2CO3 seed layer prepared via the chemical solution deposition (CSD) method as a template for SrTiO3 growth by pulsed laser deposition (PLD). The growth window of the SrTiO3 thin film was determined by in situ X-ray diffraction and by studying the thermal stability of the La2O2CO3 film. This study resulted in crack-free films with preferential but not exclusive (001) out-of-plane orientation when using one-step PLD deposition at 750 °C. Further in-depth X-ray diffraction analysis revealed that the SrTiO3 film exhibited multiple preferential orientations rather than a continuous fibre texture. Transmission electron microscopy confirmed a uniform SrTiO3 film without interfacial reactions and a homogeneous composition. These findings highlight the key role of deposition conditions in controlling crystallinity and orientation, enabling the integration of high-quality perovskite oxide on silicon.


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Julkaisussa olevat rahoitustiedot
H. R. acknowledges support and funding as a postdoctoral fellow for fundamental research from the Research FoundationFlanders (FWO) under grant number 1273621N. GIWAXS patterns were measured at the ALBA synchrotron facility with the collaboration of the ALBA staff.


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