Preferentially oriented SrTiO3 thin films grown on lanthanide-assisted Si(001) via pulsed laser deposition




Rijckaert, Hannes; Latronico, Giovanna; Deduytsche, Davy; Solano, Eduardo; Paturi, Petriina; Mele, Paolo

PublisherRoyal Society of Chemistry (RSC)

2026

 Journal of Materials Chemistry. C

7

2050-7526

2050-7534

DOIhttps://doi.org/10.1039/d5tc03382a

https://doi.org/10.1039/d5tc03382a

https://research.utu.fi/converis/portal/detail/Publication/506486516



The integration of high-quality SrTiO3 thin films on silicon substrates is crucial for various applications. This work investigates the use of an out-of-plane, self-oriented La2O2CO3 seed layer prepared via the chemical solution deposition (CSD) method as a template for SrTiO3 growth by pulsed laser deposition (PLD). The growth window of the SrTiO3 thin film was determined by in situ X-ray diffraction and by studying the thermal stability of the La2O2CO3 film. This study resulted in crack-free films with preferential but not exclusive (001) out-of-plane orientation when using one-step PLD deposition at 750 °C. Further in-depth X-ray diffraction analysis revealed that the SrTiO3 film exhibited multiple preferential orientations rather than a continuous fibre texture. Transmission electron microscopy confirmed a uniform SrTiO3 film without interfacial reactions and a homogeneous composition. These findings highlight the key role of deposition conditions in controlling crystallinity and orientation, enabling the integration of high-quality perovskite oxide on silicon.


H. R. acknowledges support and funding as a postdoctoral fellow for fundamental research from the Research FoundationFlanders (FWO) under grant number 1273621N. GIWAXS patterns were measured at the ALBA synchrotron facility with the collaboration of the ALBA staff.


Last updated on 09/03/2026 11:35:08 AM