Growth and properties of crystalline barium oxide on the GaAs(100) substrate



: M Yasir, J Dahl, M Kuzmin, J Lång, M Tuominen, M P J Punkkinen, P Laukkanen, K Kokko, V-M Korpijärvi, V Polojärvi, M Guina

: 2013

: Applied Physics Letters

: 19

: 103

: 19

: 191601

: 4

: 0003-6951

DOI: https://doi.org/10.1063/1.4828794

: http://scitation.aip.org/content/aip/journal/apl/103/19/10.1063/1.4828794


Growing a crystalline oxide film on III-V semiconductor renders possible approaches to improve operation of electronics and optoelectronics heterostructures such as oxide/semiconductor junctions for transistors and window layers for solar cells. We demonstrate the growth of crystalline barium oxide (BaO) on GaAs(100) at low temperatures, even down to room temperature. Photoluminescence (PL) measurements reveal that the amount of interface defects is reduced for BaO/GaAs, compared to Al2O3/GaAs, suggesting that BaO is a useful buffer layer to passivate the surface of the III-V device material. PL and photoemission data show that the produced junction tolerates the post heating around 600 °C.



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