B3 Vertaisarvioimaton artikkeli konferenssijulkaisussa
Integrated on-chip energy storage using porous-silicon electrochemical capacitors
Tekijät: D. S. Gardner, C. W. Holzwarth III, Y. Liu, S. B. Clendenning, W. Jin, B. K. Moon, C. Pint, Z. Chen, E. Hannah, R. Chen, C. P. Wang, C. Chen, E. Mäkilä, J.L. Gustafson
Konferenssin vakiintunut nimi: International Electron Devices Meeting
Kustantaja: Institute of Electrical and Electronics Engineers Inc.
Julkaisuvuosi: 2014
Kokoomateoksen nimi: 2014 IEEE International Electron Devices Meeting (IEDM)
Tietokannassa oleva lehden nimi: Technical Digest - International Electron Devices Meeting, IEDM
Sivujen määrä: 4
ISBN: 978-1-4799-8000-0
DOI: https://doi.org/10.1109/IEDM.2014.7047009
Verkko-osoite: http://api.elsevier.com/content/abstract/scopus_id/84938225965
Integrated on-chip energy storage is increasingly important in the fields of internet of things, energy harvesting, and wearables with capacitors being ideal for devices requiring higher powers, low voltages, or many thousands of cycles. This work demonstrates electrochemical capacitors fabricated using porous Si nanostructures with very high surface-to-volume ratios and an electrolyte. Stability is achieved through ALD TiN or CVD carbon coatings. The use of Si processing methods creates the potential for on-chip energy storage.
