B3 Non-refereed article in a conference publication
Integrated on-chip energy storage using porous-silicon electrochemical capacitors
Authors: D. S. Gardner, C. W. Holzwarth III, Y. Liu, S. B. Clendenning, W. Jin, B. K. Moon, C. Pint, Z. Chen, E. Hannah, R. Chen, C. P. Wang, C. Chen, E. Mäkilä, J.L. Gustafson
Conference name: International Electron Devices Meeting
Publisher: Institute of Electrical and Electronics Engineers Inc.
Publication year: 2014
Book title : 2014 IEEE International Electron Devices Meeting (IEDM)
Journal name in source: Technical Digest - International Electron Devices Meeting, IEDM
Number of pages: 4
ISBN: 978-1-4799-8000-0
DOI: https://doi.org/10.1109/IEDM.2014.7047009(external)
Web address : http://api.elsevier.com/content/abstract/scopus_id/84938225965(external)
Integrated on-chip energy storage is increasingly important in the fields of internet of things, energy harvesting, and wearables with capacitors being ideal for devices requiring higher powers, low voltages, or many thousands of cycles. This work demonstrates electrochemical capacitors fabricated using porous Si nanostructures with very high surface-to-volume ratios and an electrolyte. Stability is achieved through ALD TiN or CVD carbon coatings. The use of Si processing methods creates the potential for on-chip energy storage.
