Properties of the SiO2- and SiNx- capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

: Dahl Johnny, Polojärvi Ville, Salmi Joel, Laukkanen Pekka, Guina Mircea

Publisher: American Institute of Physics

: 2011

: Applied Physics Letters

: 102105

: 10

: 99

: 10

: 3

: 0003-6951

DOI: https://doi.org/10.1063/1.3634046