A1 Refereed original research article in a scientific journal

Properties of the SiO2- and SiNx- capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

Authors: Dahl Johnny, Polojärvi Ville, Salmi Joel, Laukkanen Pekka, Guina Mircea

Publisher: American Institute of Physics

Publication year: 2011

Journal:Applied Physics Letters

Article number: 102105

Number in series: 10

Volume: 99

Issue: 10

Number of pages: 3

ISSN: 0003-6951

DOI: https://doi.org/10.1063/1.3634046