A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy
Tekijät: M. Tuominen, J. Lång, J. Dahl, M. Kuzmin, M. Yasir, J. Mäkelä, J. R. Osiecki, K. Schulte, M. P. J. Punkkinen, P. Laukkanen, and K. Kokko
Kustantaja: AMER INST PHYSICS
Julkaisuvuosi: 2015
Journal: Applied Physics Letters
Tietokannassa oleva lehden nimi: APPLIED PHYSICS LETTERS
Lehden akronyymi: APPL PHYS LETT
Artikkelin numero: 011606
Vuosikerta: 106
Numero: 1
Aloitussivu: 187
Lopetussivu: 198
Sivujen määrä: 4
ISSN: 0003-6951
DOI: https://doi.org/10.1063/1.4905655
Verkko-osoite: http://scitation.aip.org/content/aip/journal/apl/106/1/10.1063/1.4905655
The pre-oxidized crystalline (3 x 1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3 x 1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3 x 1)-O consists of In atoms with unexpected negative (between -0.64 and -0.47 eV) and only moderate positive (In2O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes. (C) 2015 AIP Publishing LLC.
