A1 Refereed original research article in a scientific journal

Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy




AuthorsM. Tuominen, J. Lång, J. Dahl, M. Kuzmin, M. Yasir, J. Mäkelä, J. R. Osiecki, K. Schulte, M. P. J. Punkkinen, P. Laukkanen, and K. Kokko

PublisherAMER INST PHYSICS

Publication year2015

JournalApplied Physics Letters

Journal name in sourceAPPLIED PHYSICS LETTERS

Journal acronymAPPL PHYS LETT

Article number011606

Volume106

Issue1

First page 187

Last page198

Number of pages4

ISSN0003-6951

DOIhttps://doi.org/10.1063/1.4905655(external)

Web address http://scitation.aip.org/content/aip/journal/apl/106/1/10.1063/1.4905655(external)


Abstract

The pre-oxidized crystalline (3 x 1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3 x 1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3 x 1)-O consists of In atoms with unexpected negative (between -0.64 and -0.47 eV) and only moderate positive (In2O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes. (C) 2015 AIP Publishing LLC.



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