The dependence of resistively measured Bc2 and Birr on BaZrO3 concentration in YBa2Cu3O 6+x thin films

: Malmivirta M., Palonen H., Huhtinen H., Paturi P.

Publisher: Institute of Physics Publishing

: 2014

: Journal of Physics: Conference Series

: 507

: 4

: 1742-6596

DOI: https://doi.org/10.1088/1742-6596/507/1/012030

: http://api.elsevier.com/content/abstract/scopus_id:84902267151

The effect of BaZrO (BZO) concentration on B and B2 in YBaCuO+x (YBCO) thin films was investigated with resistive measurements. It was found that in field out-of-plane configuration both B and B2 decrease with the highest BZO concentration of 9 wt% whereas the other samples show no significant change. The angular dependence of B of the highest BZO concentration sample has a pronounced c-axis peak that is typical for BZO-doped YBCO but the others do not exhibit that clear peak. On the other hand, B 2 obeys the Blatter scaling law and the Blatter scaling parameter γ levels off to 3 - 3.5 above few wt% of BZO. © Published under licence by IOP Publishing Ltd.