Pekka Laukkanen
peklau@utu.fi ORCID-tunniste: https://orcid.org/0000-0003-4220-985X |
pintatiede; puolijohde; pinnan passivointi; ohutkalvot
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- The structural origin of the efficient photochromism in natural minerals (2022)
- Proceedings of the National Academy of Sciences of the United States of America
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Atomic and electronic structures of Si/Ge(100) interfaces studied by high-resolution photoelectron spectroscopy and scanning tunneling microscopy (2021)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying (2021)
- ACS Materials Au
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Black silicon boron emitter solar cells with EQE above 95% in UV (2021)
- Conference Record IEEE Photovoltaic Specialists Conference
(A4 Vertaisarvioitu artikkeli konferenssijulkaisussa) - Evidence for the Eu 4f Character of Conduction-Band Edge at the Eu2O3 Surface Studied by Scanning Tunneling Spectroscopy (2021)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge (2021)
- Advanced Electronic Materials
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Passivation of III-V surfaces with crystalline oxidation (2021)
- Applied Physics Reviews
(A2 Vertaisarvioitu katsausartikkeli tieteellisessä lehdessä) - Stabilization of unstable and metastable InP native oxide thin films by interface effects (2021)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 degrees C (2020)
- ACS Applied Materials and Interfaces
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Dimer-vacancy defects on Si(1 0 0): The role of nickel impurity (2020)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä )



