Pekka Laukkanen
peklau@utu.fi ORCID-tunniste: https://orcid.org/0000-0003-4220-985X |
pintatiede; puolijohde; pinnan passivointi; ohutkalvot
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Surface Properties of p‐GaN and Formation of Nickel Metal Contacts (2025)
- Advanced Materials Interfaces
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Transforming Schottky to Ohmic Contacts via Ultrahigh-Vacuum Engineered Interfacial Alloying (2025)
- ACS Applied Materials and Interfaces
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Bridging the gap between surface physics and photonics (2024)
- Reports on Progress in Physics
(A2 Vertaisarvioitu katsausartikkeli tieteellisessä lehdessä) - Dry cleaning of InSb surfaces by hydrogen molecule exposure in ultrahigh vacuum (2024)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Modeling the Influence of Deposition Parameters on the Crystalline Degree in the Simulation of Polycrystalline Silicon (2024)
- physica status solidi (b)
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Polycrystalline silicon, a molecular dynamics study: I. Deposition and growth modes (2024)
- Modelling and Simulation in Materials Science and Engineering
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Polycrystalline silicon, a molecular dynamics study: II. Grains, grain boundaries and their structure (2024)
- Modelling and Simulation in Materials Science and Engineering
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Atomic Level Chemical and Structural Properties of Silicon Surface and Initial Stages of Oxidation (2023)
- Solid State Phenomena
(A4 Vertaisarvioitu artikkeli konferenssijulkaisussa) - Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces (2023)
- Solid State Phenomena
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Efficient surface passivation of germanium nanostructures with 1% reflectance (2023)
- Nanotechnology
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä )



