Pekka Laukkanen
peklau@utu.fi ORCID-tunniste: https://orcid.org/0000-0003-4220-985X |
pintatiede; puolijohde; pinnan passivointi; ohutkalvot
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Formation and thermal-desorption-controlled patterning of Yb-induced structures on vicinal Si(111)[112]-miscut surface (2003)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Formation of ytterbium silicide nanowires on Si(001) (2003)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Initial stages of Yb/Si(100) interface growth: 2x3 and 2x6 reconstructions (2003)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Investigation of the surface topography and double layer characteristics of variously pre-treated antimony single crystal electrodes (2003)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Ruthenium-modified MCM-41 mesoporous molecular sieve and Y zeolite catalysts for selective hydrogenation of cinnamaldehyde (2003)
- Applied Catalysis A: General
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Scanning tunneling microscopy study of GaAs(100) surface prepared by HCl-isopropanol treatment (2003)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Two series of triple- and single-domain reconstructions induced by europium on vicinal Si(111)[112]-miscut surface (2003)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Yb, Eu, and (Yb+Eu)-stabilized 3x1 and 3x2 reconstructions on Si(111) (2003)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - 1.32 um GaInNAs / GaAs laser with a low threshold current density (2002)
- IEEE Photonics Technology Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - An effect of vicinal surface morphology on adsorbate structure: Yb growth on [112]-tilt Si(111) (2002)
- Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä )



