A1 Refereed original research article in a scientific journal
Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge
Authors: Lehtiö Juha-Pekka, Rad Zahra Jahanshah, Granroth Sari, Yasir Muhammad, Punkkinen Marko, Punkkinen Risto, Hedman Hannu-Pekka, Rueff Jean-Pascal, Rauha Ismo TS, Savin Hele, Laukkanen Pekka, Kokko Kalevi
Publisher: WILEY
Publication year: 2021
Journal: Advanced Electronic Materials
Journal name in source: ADVANCED ELECTRONIC MATERIALS
Journal acronym: ADV ELECTRON MATER
Article number: ARTN 2100034
Volume: 7
Issue: 4
Number of pages: 6
ISSN: 2199-160X
eISSN: 2199-160X
DOI: https://doi.org/10.1002/aelm.202100034(external)
Web address : https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202100034(external)
Self-archived copy’s web address: https://research.utu.fi/converis/portal/detail/Publication/53647827(external)
Negative static charge and induced internal electric field have often
been observed in the interfaces between silicon and high‐κ dielectrics,
for example Al2O3 and HfO2. The
electric field provides either beneficial (e.g., field‐effect
passivation) or harmful (e.g., voltage instability) effect depending on
the application. Different intrinsic and extrinsic defects in the
dielectric film and interface have been suggested to cause the static
charge but this issue is still unresolved. Here spectroscopic evidence
is presented for a structural change in the interfaces where static
charge is present. The observed correlation between the Si core‐level
shift and static negative charge reveals the role of Si bonding
environment modification in the SiO2 phase. The result is in
good agreement with recent theoretical models, which relate the static
charge formation to interfacial atomic transformations together with the
resulting acceptor doping of SiO2.
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