A1 Journal article – refereed

Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge




List of Authors: Lehtiö JP, Rad ZJ, Granroth S, Yasir M, Punkkinen M, Punkkinen R, Hedman HP, Rueff JP, Rauha ITS, Savin H, Laukkanen P, Kokko K

Publisher: WILEY

Publication year: 2021

Journal: Advanced Electronic Materials

Journal name in source: ADVANCED ELECTRONIC MATERIALS

Journal acronym: ADV ELECTRON MATER

Volume number: 7

Issue number: 4

Number of pages: 6

ISSN: 2199-160X

eISSN: 2199-160X

DOI: http://dx.doi.org/10.1002/aelm.202100034

URL: https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202100034


Abstract
Negative static charge and induced internal electric field have often
been observed in the interfaces between silicon and high‐κ dielectrics,
for example Al2O3 and HfO2. The
electric field provides either beneficial (e.g., field‐effect
passivation) or harmful (e.g., voltage instability) effect depending on
the application. Different intrinsic and extrinsic defects in the
dielectric film and interface have been suggested to cause the static
charge but this issue is still unresolved. Here spectroscopic evidence
is presented for a structural change in the interfaces where static
charge is present. The observed correlation between the Si core‐level
shift and static negative charge reveals the role of Si bonding
environment modification in the SiO2 phase. The result is in
good agreement with recent theoretical models, which relate the static
charge formation to interfacial atomic transformations together with the
resulting acceptor doping of SiO2.

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Last updated on 2021-24-06 at 11:22