Perovskite-inspired materials (PIMs) are promising candidates for low-toxicity indoor photovoltaics (IPVs), but their power conversion efficiencies (PCEs) have been so far largely limited by poor thin-film morphology and suboptimal device architectures. Here, we report a PCE exceeding 10% under 1000 lux indoor lighting by integrating device and film engineering strategies, including a dual-purpose interfacial modifier atop a hybrid antimony–bismuth halide PIM, advancing the development of efficient pnictogen-based IPVs for Internet of Things (IoT) applications.