A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Single-Quantum-Dot Heat Valve
Tekijät: B. Dutta, D. Majidi, N. W. Talarico, N. Lo Gullo, H. Courtois, C. B. Winkelmann
Kustantaja: AMER PHYSICAL SOC
Julkaisuvuosi: 2020
Journal: Physical Review Letters
Tietokannassa oleva lehden nimi: PHYSICAL REVIEW LETTERS
Lehden akronyymi: PHYS REV LETT
Artikkelin numero: ARTN 237701
Vuosikerta: 125
Numero: 23
Sivujen määrä: 6
ISSN: 0031-9007
eISSN: 1079-7114
DOI: https://doi.org/10.1103/PhysRevLett.125.237701
Rinnakkaistallenteen osoite: https://research.utu.fi/converis/portal/detail/Publication//51152583
We demonstrate gate control of electronic heat flow in a thermally biased single-quantum-dot junction. Electron temperature maps taken in the immediate vicinity of the junction, as a function of the gate and bias voltages applied to the device, reveal clearly defined Coulomb diamond patterns that indicate a maximum heat transfer at the charge degeneracy point. The nontrivial bias and gate dependence of this heat valve results from the quantum nature of the dot at the heart of device and its strong coupling to leads.
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