Studies of Hydrogen Atom Recombination in Solid Hydrogen Deuteride

: Wetzel, C. K.; Lee, D. M.; Sheludiakov, S.; Ahokas, J.; Vasiliev, S.; Khmelenko, V. V.

Publisher: SPRINGER/PLENUM PUBLISHERS

: NEW YORK

: 2025

: Journal of Low Temperature Physics

: JOURNAL OF LOW TEMPERATURE PHYSICS

: J LOW TEMP PHYS

: 11

: 0022-2291

: 1573-7357

DOI: https://doi.org/10.1007/s10909-025-03281-8

: https://doi.org/10.1007/s10909-025-03281-8

: https://research.utu.fi/converis/portal/detail/Publication/492043471

We used the method of electron spin resonance (ESR) to investigate the temperature-dependent recombination rate of H atoms in solid molecular hydrogen deuteride (HD). A 1.5 mu m thick solid molecular HD film was deposited at a rate of 2 monolayer/s, onto a gold surface maintained at T=1.5 K. H and D atoms were accumulated in the film by maintaining radio-frequency electric discharge above the film for 19 days. After further storage of the sample for 48 h, at T < 1 K, the D atom signal vanished. The concentration of H atoms was monitored as the sample was warmed stepwise from 1.1 K to 2.8 K. The recombination rate of H atoms in solid HD was found to be proportional to temperature in this range.

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The authors greatly acknowledge the support by the National Science Foundation Grant No. DMR 2104756, the Academy of Finland Grant No. 317141, and the Jenny and Antti Wihuri Foundation. CKW acknowledges the support of the HEEP fellowship.