Area-Dependent Resistive Switching and Interfacial Dynamics in GCMO-Based Memristors
: Antola, Anni; Laaksonen, Johanna; Huhtinen, Hannu; Angervo, Ilari; Granroth, Sari; Schulman, Alejandro; Laukkanen, Pekka; Paturi, Petriina
Publisher: AMER CHEMICAL SOC
: WASHINGTON
: 2025
: ACS applied electronic materials
: ACS APPLIED ELECTRONIC MATERIALS
: ACS APPL ELECTRON MA
: 9
: 2637-6113
DOI: https://doi.org/10.1021/acsaelm.5c00403(external)
: https://pubs.acs.org/doi/10.1021/acsaelm.5c00403(external)
: https://research.utu.fi/converis/portal/detail/Publication/491721651(external)
This study explores the area-dependent resistive switching (RS) characteristics of Gd0.2Ca0.8MnO3 (GCMO)-based memristors with aluminum (Al) and gold (Au) electrodes, emphasizing their potential for neuromorphic computing applications. Using a combination of electrical measurements and X-ray photoelectron spectroscopy (XPS), we demonstrate that the high-resistance (HRS) and low-resistance (LRS) states exhibit predictable scaling with device area, with HRS resistances ranging from 107 to 108 Omega and LRS from 105 to 107 Omega, supporting the hypothesis of interface-type RS. XPS depth profiling revealed notable differences in AlO x interfacial layer composition between HRS and LRS, with a higher oxide content and a widened interfacial region in HRS. Additionally, the multistate RS capability of up to ten distinct levels was achieved by modulating applied voltages, highlighting GCMO's suitability as a material for synaptic weight storage in artificial neural networks. Our findings underscore GCMO's promise for energy-efficient, scalable memristor-based systems.
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This project has received funding from the Academy of Finland project 352802 and from the European Union’sHorizon 2020 Research and Innovation Programme under theMarie Skłodowska-Curie grant agreement No 101034371. Allauthors would like to acknowledge the Jenny & Antti WihuriFoundation for their financial support. Additionally, A.A.acknowledges the Finnish Cultural Foundation, grant number00230224, and the University of Turku Graduate School(UTUGS) for their financial support.
