Structurally simplified GCMO crossbar design for artificial synaptic networks




Antola, Anni; Angervo, Ilari; Huhtinen, Hannu; Miettinen, Mikko; Schulman, Alejandro; Paturi, Petriina

PublisherAmerican Institute of Physics

2024

Applied Physics Letters

Applied Physics Letters

253502

124

25

0003-6951

1077-3118

DOIhttps://doi.org/10.1063/5.0210544

https://research.utu.fi/converis/portal/detail/Publication/457039333



Harnessing the full power of memristors as artificial synapses demands a simple and scalable crossbar architecture enabling their seamless integration into diverse applications. This Letter presents the 3 × 3 memristor crossbar array configuration featuring a grid of interconnected devices. The composition includes Al as the reactive top electrode connecting the device columns and Gd1−xCaxMnO3 (GCMO, x = 0.8 ) serving as the bottom electrode connecting the device rows as well as the memristive material eliminating the need for additional layers and fabrication steps. Controlled-sized vias through insulating the Al2O3 layer connect the electrodes forming the active interface. The idea is validated with a test sample of 3 × 3 crossbars with the Au/GCMO/Al structure, Au enabling Ohmic contact to GCMO, with device resistive switching ratios mostly around 102 and yield of over 90%. The devised crossbar structure could provide a highly scalable, yet simple, geometry suitable for synaptic networks.


This project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Sk\u0142odowska-Curie Grant Agreement No. 101034371, Academy of Finland Project Nos. 308285 and 352802, and Business Finland Project No. 344/31/2021. All authors would like to acknowledge the Jenny & Antti Wihuri Foundation for their financial support. Additionally, A. Antola acknowledges the Finnish Cultural Foundation and the University of Turku Graduate School (UTUGS) for their financial support.


Last updated on 2025-27-01 at 19:38