A1 Refereed original research article in a scientific journal
Structural characterization and strain relaxation in porous GaN layers
Authors: Mynbaeva M, Titkov A, Kryganovskii A, Ratnikov V, Mynbaev K, Huhtinen H, Laiho R, Dmitriev V
Publisher: AMER INST PHYSICS
Publication year: 2000
Journal:: Applied Physics Letters
Journal name in source: APPLIED PHYSICS LETTERS
Journal acronym: APPL PHYS LETT
Volume: 76
Issue: 9
First page : 1113
Last page: 1115
Number of pages: 3
ISSN: 0003-6951
DOI: https://doi.org/10.1063/1.125955
Abstract
Surface and subsurface structures of porous GaN prepared by anodizing epitaxial GaN layers grown on SiC substrates are investigated by atomic-force microscopy. Comparison of the images of the porous GaN surfaces with those taken on planes cleft perpendicular to the surface shows that the pores are formed along the boundaries of columnar structures of the original GaN films. X-ray investigations show that the porous GaN has less residual stresses than the initial GaN epitaxial layers. Use of porous GaN as a buffer layer for growth of low-stress GaN is proposed. (C) 2000 American Institute of Physics. [S0003-6951(00)01809-X].
Surface and subsurface structures of porous GaN prepared by anodizing epitaxial GaN layers grown on SiC substrates are investigated by atomic-force microscopy. Comparison of the images of the porous GaN surfaces with those taken on planes cleft perpendicular to the surface shows that the pores are formed along the boundaries of columnar structures of the original GaN films. X-ray investigations show that the porous GaN has less residual stresses than the initial GaN epitaxial layers. Use of porous GaN as a buffer layer for growth of low-stress GaN is proposed. (C) 2000 American Institute of Physics. [S0003-6951(00)01809-X].
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