A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Structural characterization and strain relaxation in porous GaN layers
Tekijät: Mynbaeva M, Titkov A, Kryganovskii A, Ratnikov V, Mynbaev K, Huhtinen H, Laiho R, Dmitriev V
Kustantaja: AMER INST PHYSICS
Julkaisuvuosi: 2000
Lehti:: Applied Physics Letters
Tietokannassa oleva lehden nimi: APPLIED PHYSICS LETTERS
Lehden akronyymi: APPL PHYS LETT
Vuosikerta: 76
Numero: 9
Aloitussivu: 1113
Lopetussivu: 1115
Sivujen määrä: 3
ISSN: 0003-6951
DOI: https://doi.org/10.1063/1.125955
Tiivistelmä
Surface and subsurface structures of porous GaN prepared by anodizing epitaxial GaN layers grown on SiC substrates are investigated by atomic-force microscopy. Comparison of the images of the porous GaN surfaces with those taken on planes cleft perpendicular to the surface shows that the pores are formed along the boundaries of columnar structures of the original GaN films. X-ray investigations show that the porous GaN has less residual stresses than the initial GaN epitaxial layers. Use of porous GaN as a buffer layer for growth of low-stress GaN is proposed. (C) 2000 American Institute of Physics. [S0003-6951(00)01809-X].
Surface and subsurface structures of porous GaN prepared by anodizing epitaxial GaN layers grown on SiC substrates are investigated by atomic-force microscopy. Comparison of the images of the porous GaN surfaces with those taken on planes cleft perpendicular to the surface shows that the pores are formed along the boundaries of columnar structures of the original GaN films. X-ray investigations show that the porous GaN has less residual stresses than the initial GaN epitaxial layers. Use of porous GaN as a buffer layer for growth of low-stress GaN is proposed. (C) 2000 American Institute of Physics. [S0003-6951(00)01809-X].
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