A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Fine structure of the inner electric field in semiconductor laser diodes studied by EFM
Tekijät: Ankudinov A, Marushchak V, Titkov A, Evtikhiev V, Kotelnikov E, Egorov A, Riechert H, Huhtinen H, Laiho R
Kustantaja: V S V CO. LTD
Julkaisuvuosi: 2001
Lehti:: Physics of Low-Dimensional Structures
Tietokannassa oleva lehden nimi: PHYSICS OF LOW-DIMENSIONAL STRUCTURES
Lehden akronyymi: PHYS LOW-DIMENS STR
Vuosikerta: 3-4
Aloitussivu: 9
Lopetussivu: 16
Sivujen määrä: 8
ISSN: 0204-3467
Tiivistelmä
Electrostatic force microscopy in dynamical contact and non-contact modes is employed to study the distribution of the electric field and capacitance at the cleavages of AlGaAs/GaAs based p-i-n laser diode heterostructures. The fine structure of the inner electric field located at the i-waveguide of the laser heterostructure is revealed and investigated under forward and backward biases applied to the diode. The redistribution of the electric field in favor of i-waveguide/p-emitter interface is observed at high level of injected current. When the injected current is increased, a growth of the capacitance signal at the i-waveguide is also detected which may reflect the injected carriers distribution.
Electrostatic force microscopy in dynamical contact and non-contact modes is employed to study the distribution of the electric field and capacitance at the cleavages of AlGaAs/GaAs based p-i-n laser diode heterostructures. The fine structure of the inner electric field located at the i-waveguide of the laser heterostructure is revealed and investigated under forward and backward biases applied to the diode. The redistribution of the electric field in favor of i-waveguide/p-emitter interface is observed at high level of injected current. When the injected current is increased, a growth of the capacitance signal at the i-waveguide is also detected which may reflect the injected carriers distribution.
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