A1 Refereed original research article in a scientific journal

Tuning the probability of defect formation via substrate strains in Sr2FeMoO6 films




AuthorsWaheed A. Adeagbo, Martin Hoffmann, Arthur Ernst, Wolfram Hergert, Minnamari Saloaro, Petriina Paturi, Kalevi Kokko

PublisherAMER PHYSICAL SOC

Publication year2018

JournalPhysical Review Materials

Journal name in sourcePHYSICAL REVIEW MATERIALS

Journal acronymPHYS REV MATER

Article numberARTN 083604

Volume2

Issue8

Number of pages9

ISSN2475-9953

DOIhttps://doi.org/10.1103/PhysRevMaterials.2.083604

Self-archived copy’s web addresshttps://research.utu.fi/converis/portal/detail/Publication/35842660


Abstract
Since oxide materials like Sr2FeMoO6 are usually applied as thin films, we studied the effect of biaxial strain, resulting from the substrate, on the electronic and magnetic properties and, in particular, on the formation energy of point defects. From our first-principles calculations, we determined that the probability of forming point defects, like vacancies or substitutions, in Sr2FeMoO6 could be adjusted by choosing a proper substrate. For example, the amount of antisite disorder can be reduced with compressive strain in order to obtain purer Sr2FeMoO6 as needed for spintronic applications, while the formation of oxygen vacancies is more likely for tensile strain, which improves the functionality of Sr2FeMoO6 as a basis material of solid oxide fuel cells. In addition, we were also able to include the oxygen partial pressure in our study by using its thermodynamic connection with the chemical potential. Strontium vacancies become, for example, more likely than oxygen vacancies at a pressure of 1 bar. Hence, this degree of freedom might offer in general another potential method for defect engineering in oxides aside from, e.g., experimental growth conditions like temperature or gas pressure.

Downloadable publication

This is an electronic reprint of the original article.
This reprint may differ from the original in pagination and typographic detail. Please cite the original version.





Last updated on 2024-26-11 at 21:05