A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Wet etching of dilute nitride GaInNAs, GaInNAsSb, and GaNAsSb alloys lattice-matched to GaAs
Tekijät: Marianna Raappana, Ville Polojärvi, Arto Aho, Jaakko Mäkelä, Timo Aho, Antti Tukiainen, Pekka Laukkanen, Mircea Guina
Kustantaja: PERGAMON-ELSEVIER SCIENCE LTD
Julkaisuvuosi: 2018
Journal: Corrosion Science
Tietokannassa oleva lehden nimi: CORROSION SCIENCE
Lehden akronyymi: CORROS SCI
Vuosikerta: 136
Aloitussivu: 268
Lopetussivu: 274
Sivujen määrä: 7
ISSN: 0010-938X
eISSN: 1879-0496
DOI: https://doi.org/10.1016/j.corsci.2018.03.018
Tiivistelmä
We have studied the etching of GaInNAs, GaInNAsSb, and GaNAsSb alloys by NH4OH, H2SO4, and H3PO4 based solutions. NH4OH based solutions resulted in smooth surface, while other solutions created rougher and granular surfaces. The etch rates were found to increase with the Sb content. For GaInNAs, x-ray photoelectron spectroscopy revealed the enrichment of In on the etched surfaces, indicating In or In oxides having a smaller removal rate compared to Ga or Ga oxides. The enrichment of In was associated with smoother surfaces after etching and an enhanced photoluminescence caused by lower surface recombination due to reduced surface state density.
We have studied the etching of GaInNAs, GaInNAsSb, and GaNAsSb alloys by NH4OH, H2SO4, and H3PO4 based solutions. NH4OH based solutions resulted in smooth surface, while other solutions created rougher and granular surfaces. The etch rates were found to increase with the Sb content. For GaInNAs, x-ray photoelectron spectroscopy revealed the enrichment of In on the etched surfaces, indicating In or In oxides having a smaller removal rate compared to Ga or Ga oxides. The enrichment of In was associated with smoother surfaces after etching and an enhanced photoluminescence caused by lower surface recombination due to reduced surface state density.
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