Line shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III-V semiconductors




J. Mäkelä, M. Tuominen, M. Kuzmin, M. Yasir, J. Lång, M.P.J Punkkinen, P. Laukkanen, K. Kokko, K. Schulte, J. Osiecki, R.M. Wallace

PublisherElsevier

2015

Applied Surface Science

329

371

375

5

0169-4332

0169-4332

DOIhttps://doi.org/10.1016/j.apsusc.2014.12.155(external)



The In 3d5/2 photoelectron spectroscopy peak has been widely used to determine the interface structures of In-containing III-V device materials (e.g., oxidation states). However, an unclear parameter affecting the determination of the energy shifts and number of the core-level components, and therefore, the interpreted interface structure and composition, is still the intrinsic In 3d5/2 peak line shape. It is undecided whether the line shape is naturally symmetric or asymmetric for pure In-containing III-V compounds. By using high-resolution photoelectron spectroscopy, we show that the In 3d5/2 asymmetry arising from the emission at high binding-energy tail is not an intrinsic property of InAs, InP, InSb and InGaAs. Furthermore, it is shown that asymmetry of In 3d5/2 peaks of pure III-V’s originates from the natural surface reconstructions which cause the coexistence of slightly shifted In 3d5/2  components with the symmetric peak shape and dominant Lorentzian broadening.



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